FDZ197PZ Fairchild Semiconductor, FDZ197PZ Datasheet - Page 4

• Manufacturer Part Number: FDZ197PZ
• Description: MOSFET P-CH 20V 3.8A 6-WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ197PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 64 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ197PZTR

©2009 Fairchild Semiconductor Corporation
FDZ197PZ Rev.C1
Typical Characteristics
0.1
10
10
10
10
10
10
10
10
10
4.5
3.0
1.5
0.0
1
0.01
Figure 7.
-2
-3
-4
-5
-6
-7
-8
-9
Figure 11.
0
0
Figure 9. Unclamped Inductive
I
V
D
GS
= -3.8 A
0.1
= 0 V
3
Switching Capability
-V
t
3
Gate Charge Characteristics
AV
GS ,
Gate to Source Voltage
, TIME IN AVALANCHE (ms)
T
Gate Leakage Current vs
J
T
GATE TO SOURCE VOLTAGE (V)
Q
= 125
J
g
= 125
V
6
, GATE CHARGE (nC)
DD
1
o
6
= -10 V
C
o
C
9
10
T
T
V
V
J
DD
J
DD
9
= 25
T
= 25 °C unless otherwise noted
J
= -8 V
= -12 V
12
= 25
o
C
o
100
C
12
15
1000
18
15
4
200
100
3000
1000
0.01
0.5
10
0.1
100
20
10
1
10
1
0.1
0.1
-4
Figure 12.
Figure 8.
f = 1 MHz
V
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
Figure 10. Forward Bias Safe
GS
J
A
θ
JA
= MAX RATED
= 25
10
= 0 V
= 133
-3
-V
-V
o
C
DS
DS
to Source Voltage
o
10
Capacitance vs Drain
, DRAIN TO SOURCE VOLTAGE (V)
C/W
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
DS(on)
-2
Single Pulse Maximum
t, PULSE WIDTH (sec)
1
10
Power Dissipation
-1
1
1
SINGLE PULSE
R
T
A
θ
10
JA
= 25
10
= 133
C
C
C
o
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C
iss
oss
rss
100
o
C/W
10
100
1 ms
10 ms
100 ms
1 s
DC
1000
µ
s
50
20