SI1473DH-T1-E3 Vishay, SI1473DH-T1-E3 Datasheet

MOSFET P-CH 30V 2.7A SC70-6

SI1473DH-T1-E3

Manufacturer Part Number
SI1473DH-T1-E3
Description
MOSFET P-CH 30V 2.7A SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI1473DH-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
6.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
365pF @ 15V
Power - Max
2.78W
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Polarity
P Channel
Continuous Drain Current Id
1.6A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
145mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.8 A
Power Dissipation
1.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1473DH-T1-E3TR
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
G
Ordering Information: Si1473DH-T1-E3 (Lead (Pb)-free)
D
D
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 30
1
2
3
SC-70 (6-LEADS)
(V)
SOT-363
Top View
0.145 at V
0.100 at V
Si1473DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
6
5
4
GS
GS
D
D
S
= - 4.5 V
J
a, b
(Ω)
= - 10 V
= 150 °C)
a, d
P-Channel 30 V (D-S) MOSFET
Marking Code
BJ XX
a, b
a, b
I
D
Part #
Code
- 2.7
- 2.7
(A)
c
c, d
Lot Traceability
and Date Code
A
= 25 °C, unless otherwise noted
Q
Steady State
4.1 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Load Switch for Portable Devices
Symbol
Symbol
T
R
R
Definition
Compliant to RoHS Directive 2002/95/EC
J
V
V
I
P
, T
I
DM
I
thJA
thJF
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
60
34
G
P-Channel MOSFET
- 55 to 150
- 1.25
- 2.8
- 2.3
1.5
- 2.7
Limit
± 20
- 2.3
-2.7
2.78
1.78
1
- 30
260
- 8
a, b
a, b
a, b
a, b
a, b
c
c
S
D
Maximum
80
45
Vishay Siliconix
Si1473DH
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1473DH-T1-E3 Summary of contents

Page 1

... D Marking Code Top View Ordering Information: Si1473DH-T1-E3 (Lead (Pb)-free) Si1473DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current a, b Maximum Power Dissipation ...

Page 2

... Si1473DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 74438 S10-0646-Rev. E, 22-Mar- thru 1.8 2.4 3 4.8 6.4 8 Si1473DH Vishay Siliconix 2.0 1.6 1 125 °C J 0.8 25 °C 0 °C 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 600 480 C iss 360 240 C 120 oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si1473DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.01 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1 250 µ 100 125 150 10 Limited by R ...

Page 5

... T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si1473DH Vishay Siliconix 3.5 2.8 2.1 1.4 0.7 0 100 T - Case Temperature (°C) C Power Derating, Junction-to-Foot 125 150 www ...

Page 6

... Si1473DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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