SI1473DH-T1-E3 Vishay, SI1473DH-T1-E3 Datasheet - Page 2
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SI1473DH-T1-E3
Manufacturer Part Number
SI1473DH-T1-E3
Description
MOSFET P-CH 30V 2.7A SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI1473DH-T1-E3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
6.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
365pF @ 15V
Power - Max
2.78W
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Polarity
P Channel
Continuous Drain Current Id
1.6A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
145mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.8 A
Power Dissipation
1.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1473DH-T1-E3TR
Si1473DH
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
I
C
V
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
I
GSS
DSS
Q
DS
g
Q
R
SM
I
t
t
t
DS
oss
t
t
t
t
SD
iss
rss
S
rr
gd
a
b
fs
gs
r
r
f
f
g
g
rr
/T
/T
J
J
I
V
F
DS
= - 2.0 A, dI/dt = 100 A/µs, T
V
I
V
I
D
D
DS
DS
≅ - 2 A, V
= - 15 V, V
≅ - 2 A, V
= - 30 V, V
V
= - 15 V, V
V
V
V
V
V
V
V
V
V
GS
DS
DS
GS
DD
DD
GS
DS
DS
DS
I
S
Test Conditions
= - 4.5 V, I
= V
= - 10 V, I
= - 10 V, I
= - 2 A, V
= 0 V, V
= - 15 V, R
= - 15 V, R
= 0 V, I
= - 30 V, V
≤ 5 V, V
I
D
GEN
T
GEN
f = 1 MHz
GS
GS
= - 250 µA
C
GS
= 25 °C
GS
, I
= - 4.5 V, I
= - 4.5 V, R
= - 10 V, R
D
D
GS
GS
= 0 V, T
= 0 V, f = 1 MHz
= - 250 µA
GS
D
D
= - 250 µA
D
GS
L
L
= ± 20 V
= - 10 V
= - 2.0 A
= - 2.0 A
= - 1.6 A
= 7.5 Ω
= 7.5 Ω
= 0 V
= 0 V
J
D
= 55 °C
g
g
J
= - 2.5 A
= 1 Ω
= 25 °C
= 1 Ω
Min.
- 30
- 1
- 3
- 0.85
0.084
0.120
Typ.
- 32
365
4.1
1.2
1.7
9.2
68
51
24
60
25
15
10
15
23
15
14
S10-0646-Rev. E, 22-Mar-10
4
6
4
6
9
Document Number: 74438
0.100
0.145
Max.
- 100
- 1.6
- 6.5
- 1.2
- 10
100
6.2
- 3
- 1
40
40
25
20
25
12
35
23
8
mV/°C
Unit
nC
nC
nA
µA
pF
ns
ns
ns
Ω
Ω
V
V
A
S
A
V