AOD409 Alpha & Omega Semiconductor Inc, AOD409 Datasheet - Page 5

• Manufacturer Part Number: AOD409
• Description: MOSFET P-CH -60V -26A TO-252
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD409

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 30V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1103-2

AOD409/AOI409
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
30
25
20
15
10
30
25
20
15
10
0.00001
0.01
5
0
0.1
10
0.00001
0
1
Figure 12: Single Pulse Avalanche capability
T
D=T
T
R
A
25
J,PK
θJA
=25°C
Figure 14: Current De-rating (Note B)
=50°C/W
on
=T
/T
A
+P
Time in avalanche, t
50
0.0001
DM
.Z
θJA
75
T
.R
CASE
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
0.0001
θJA
Single Pulse
(°C)
100
0.001
t
A
A
=
125
(s)
BV
L
150
⋅
−
0.01
I
V
D
DD
0.001
175
Pulse Width (s)
0.1
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0.001
0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 15: Single Pulse Power Rating Junction-to-
25
1
0.01
Figure 13: Power De-rating (Note B)
P
50
D
0.1
Ambient (Note H)
T
Pulse Width (s)
on
10
75
T
T
CASE
1
(°C)
100
100
10
T
125
A
=25°C
100
150
1000
1000
175