BSP295 L6327 Infineon Technologies

BSP295 L6327

Manufacturer Part Number

BSP295 L6327

Description

MOSFET N-CH 60V 1.8A SOT-223

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Specifications of BSP295 L6327

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

300 mOhm @ 1.8A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

1.8A

Vgs(th) (max) @ Id

1.8V @ 400µA

Gate Charge (qg) @ Vgs

17nC @ 10V

Input Capacitance (ciss) @ Vds

368pF @ 25V

Power - Max

1.8W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.3 Ohm @ 10 V

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

1.8 A

Power Dissipation

1800 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

BSP295 L6327
BSP295L6327INTR
BSP295L6327XT
SP000089210

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