SPB08P06P G Infineon Technologies, SPB08P06P G Datasheet - Page 7

• Manufacturer Part Number: SPB08P06P G
• Description: MOSFET P-CH 60V 8.8A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB08P06P G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.8 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package: D2PAK (TO-263)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 230.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000102179; SPB08P06P G; SPB08P06PGINTR; SPB08P06PGXT

Rev 1.5
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
70
65
60
55
50
AV
1
0
-80
=f(T
10
); R
0
j
GS
); I
j(start)
-40
=25 Ω
D
=-250 µA
0
10
1
40
T
t
AV
j
[°C]
[µs]
80
125 °C
10
120
2
100 °C
25 °C
160
200
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
16
14
12
10
8
6
4
2
0
0
gate
); I
DD
D
=-8.8 A pulsed
5
Q
gate
12 V
[nC]
30 V
10
SPB08P06P G
48 V
2008-07-09
15