FDB3502 Fairchild Semiconductor, FDB3502 Datasheet - Page 3

• Manufacturer Part Number: FDB3502
• Description: MOSFET N-CH 75V 6A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB3502

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 47 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 815pF @ 40V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB3502TR

©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
Typical Characteristics
40
35
30
25
20
15
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On- Resistance
40
30
20
10
5
0
Figure 1.
0
-75
0
Figure 5. Transfer Characteristics
2
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
V
D
DS
GS
V
-50
= 6A
vs Junction Temperature
GS
= 7V
= 10V
V
GS
= 9V
V
1
T
V
-25
DS
On-Region Characteristics
J
= 10V
GS
,
,
JUNCTION TEMPERATURE (
4
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
T
0
J
= 150
2
25
µ
o
s
C
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
6
50
T
T
J
3
J
= 25°C unless otherwise noted
= -55
75
T
J
o
= 25
C
o
100 125 150
8
C )
o
V
V
V
4
C
GS
GS
GS
= 8V
= 7V
= 6V
µ
s
5
10
3
0.001
0.01
150
120
0.1
3.0
2.5
2.0
1.5
1.0
0.5
90
60
30
40
10
1
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
5
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
5
= 0V
0.2
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
T
6
V
On-Resistance vs Gate to
GS
J
GS
10
Source Voltage
= 150
I
Source to Drain Diode
D
,
= 6V
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT(A)
0.4
o
C
15
7
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
I
0.6
20
D
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
= 6A
V
V
T
GS
GS
J
= 25
8
= 9V
= 7V
25
0.8
T
o
J
C
= 125
T
V
30
J
GS
= -55
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T
o
9
= 8V
V
J
1.0
C
GS
= 25
35
o
µ
= 10V
C
µ
s
o
s
C
1.2
10
40