FDB3502 Fairchild Semiconductor, FDB3502 Datasheet - Page 4

• Manufacturer Part Number: FDB3502
• Description: MOSFET N-CH 75V 6A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB3502

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 47 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 815pF @ 40V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB3502TR

©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
Typical Characteristics
0.05
100
0.1
10
10
10
Figure 7.
1
8
6
4
2
0
1
0.01
0.1
0
Figure 9.
I
Figure 11. Forward Bias Safe
D
= 6A
THIS AREA IS
LIMITED BY r
2
V
Switching Capability
DS
Gate Charge Characteristics
t
, DRAIN to SOURCE VOLTAGE (V)
AV
SINGLE PULSE
T
R
T
Operating Area
Unclamped Inductive
J
C
θ
1
, TIME IN AVALANCHE(ms)
JC
Q
= MAX RATED
= 25
g
0.1
4
T
= 3
, GATE CHARGE(nC)
J
o
= 125
DS(on)
C
V
o
C/W
DD
= 30V
o
C
6
10
V
T
DD
J
= 25°C unless otherwise noted
= 40V
T
8
1
J
= 25
V
o
C
DD
10
100
= 50V
100us
10ms
100ms
1ms
DC
300
12
10
4
1000
100
10
10
10
25
20
15
10
10
Figure 10.
10
5
0
0.1
4
3
2
10
25
Figure 12.
-5
Figure 8.
Current vs Case Temperature
f = 1MHz
V
GS
= 0V
Limited by Package
V
10
50
V
DS
R
Maximum Continuous Drain
Power Dissipation
to Source Voltage
GS
θ
-4
, DRAIN TO SOURCE VOLTAGE (V)
JC
T
t, PULSE WIDTH (sec)
C
= 10V
Single Pulse Maximum
Capacitance vs Drain
= 3
,
CASE TEMPERATURE (
1
o
C/W
75
10
-3
100
10
SINGLE PULSE
R
T
-2
10
C
θ
JC
= 25
= 3
o
C )
V
o
o
C
125
GS
C/W
10
www.fairchildsemi.com
C
C
C
= 10V
-1
oss
rss
iss
100
150
1