SPP04N50C3 Infineon Technologies, SPP04N50C3 Datasheet

SPP04N50C3

Manufacturer Part Number

SPP04N50C3

Description

MOSFET N-CH 560V 4.5A TO-220AB

Manufacturer

Infineon Technologies

Series

CoolMOS™r

Datasheets

1.SPA04N50C3.pdf (13 pages)

2.SPP04N50C3.pdf (13 pages)

Specifications of SPP04N50C3

Package / Case

TO-220AB

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

950 mOhm @ 2.8A, 10V

Drain To Source Voltage (vdss)

560V

Current - Continuous Drain (id) @ 25° C

4.5A

Vgs(th) (max) @ Id

3.9V @ 200µA

Gate Charge (qg) @ Vgs

22nC @ 10V

Input Capacitance (ciss) @ Vds

470pF @ 25V

Power - Max

50W

Mounting Type

Through Hole

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.95 Ohm @ 10 V

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

4.5 A

Power Dissipation

50000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Continuous Drain Current Id

4.5A

Drain Source Voltage Vds

500V

On Resistance Rds(on)

1.5ohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SP000014478
SPP04N50C3IN
SPP04N50C3X
SPP04N50C3XK
SPP04N50C3XTIN
SPP04N50C3XTIN

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SPP04N50C3

Manufacturer:

INFINEON

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

SPP04N50C3

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Current page: 1 of 13
Download datasheet (2Mb)

Rev. 2.5

Gate source voltage

Power dissipation,

Reverse diode dv/dt

•

• G

= 25°C

jmax

SP000216298

jmax

dv/dt

tot

P-TO220-3-31

jmax

2005-11-08

V/ns

Ω

Related parts for SPP04N50C3

SPP04N50C3 Summary of contents

Page 1

Gate source voltage Power dissipation 25° Reverse diode dv/dt Rev. 2.5 SP000216298 T jmax E T ...

Page 2

wavesoldering Rev. 2.5 R thJC R thJA V (BR)DSS µ ...

Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate to source charge Gate to drain charge 7 I <=I , di/dt<=400A/us DClink Identical low-side and high-side switch. ...