SPD03N50C3 Infineon Technologies, SPD03N50C3 Datasheet

SPD03N50C3

Manufacturer Part Number

SPD03N50C3

Description

MOSFET N-CH 560V 3.2A DPAK

Manufacturer

Infineon Technologies

Series

CoolMOS™r

Datasheet

1.SPD03N50C3.pdf (11 pages)

Specifications of SPD03N50C3

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.4 Ohm @ 2A, 10V

Drain To Source Voltage (vdss)

560V

Current - Continuous Drain (id) @ 25° C

3.2A

Vgs(th) (max) @ Id

3.9V @ 135µA

Gate Charge (qg) @ Vgs

15nC @ 10V

Input Capacitance (ciss) @ Vds

350pF @ 25V

Power - Max

38W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.4 Ohm @ 10 V

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

3.2 A

Power Dissipation

38000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Continuous Drain Current Id

3.2A

Drain Source Voltage Vds

560V

On Resistance Rds(on)

1.4ohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SP000014289
SP000307392
SPD03N50C3INTR
SPD03N50C3XT
SPD03N50C3XT

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Current page: 1 of 11
Download datasheet (626Kb)

Gate source voltage

Reverse diode dv/dt

Rev. 2.5

jmax

dv/dt

tot

jmax

8-04-10

V/ns

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SPD03N50C3 Summary of contents

Page 1

Gate source voltage 5) Reverse diode dv/dt Rev. 2.5 T jmax jmax T jmax tot dv/ jmax ...

Page 2

reflow soldering, MSL3 Rev. 2.5 R thJC R thJA V (BR)DSS ...

Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate to source charge Gate to drain charge 5 I <=I , di/dt<=400A/us DClink Identical low-side and high-side switch. ...