SPB18P06P G Infineon Technologies, SPB18P06P G Datasheet

MOSFET P-CH 60V 18.7A TO-263

SPB18P06P G

Manufacturer Part Number
SPB18P06P G
Description
MOSFET P-CH 60V 18.7A TO-263
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of SPB18P06P G

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 13.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
18.7A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
860pF @ 25V
Power - Max
81.1W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18.6 A
Power Dissipation
80000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package
D2PAK (TO-263)
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
130.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000102181
SPB18P06P G
SPB18P06PGINTR
SPB18P06PGXT
Rev 1.4
SPB18P06PG PG-TO263-3
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, periodic limited by
T
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
• Pb-free lead plating; RoHS compliant
Type
jmax
®
Power-Transistor
Package
j
=25 °C, unless otherwise specified
Tape and reel information
1000 pcs / reel
Symbol Conditions
I
I
E
E
dv /dt
V
P
T
D
D,pulse
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
di /dt =-200 A/µs,
T
T
D
D
page 1
A
A
A
j,max
A
=18.7 A, R
=18.7 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
DS
GS
Product Summary
V
R
I
D
=48 V,
=25 Ω
DS
DS(on),max
Marking
18P06P
8
Lead free
Yes
steady state
"-55 ... +175"
55/175/56
PG-TO263-3
260 °C
Value
-18.7
-13.2
-74.8
81.1
151
±20
-6
SPB18P06P G
Non dry
Packing
-18.6
0.13
-60
Unit
A
mJ
kV/µs
V
W
°C
V
A
2008-07-09

Related parts for SPB18P06P G

SPB18P06P G Summary of contents

Page 1

... E I =18 =18 = /dt di /dt =-200 A/µs, T =175 °C j,max =25 °C tot stg page 1 SPB18P06P G -60 V 0.13 Ω -18.6 A PG-TO263-3 Lead free Packing Yes Non dry Value Unit steady state -18.7 A -13.2 -74.8 151 kV/µs ±20 V 81.1 W "-55 ... +175" °C 260 °C ...

Page 2

... GS(th) 1000 µ DSS T =25 ° =- =150 ° =- GSS =- =-13.2 A DS(on |>2 DS(on)max =-13 (one layer, 70 µm thick) copper area for drain connection. page 2 SPB18P06P G Values Unit min. typ. max 1. -0.1 -1 µA - -10 -100 - -10 -100 nA - 101 130 mΩ 2008-07-09 ...

Page 3

... DS C oss f =1 MHz C rss t d(on =-13 =2.7 Ω R d(off =- 18 - plateau =25 ° S,pulse =18 =25 ° = =| /dt =100 A/µ page 3 SPB18P06P G Values Unit min. typ. max. - 690 860 pF - 230 290 - 95 120 - 5.8 8 16.5 - -4.1 -5 -11 -17 - -21 -28 - -5. -18 -74.8 - -0.99 -1. 105 ns - 139 208 nC 2008-07-09 ...

Page 4

... parameter limited by on-state resistance Rev 1.4 2 Drain current I =f 120 160 [° Max. transient thermal impedance Z =f(t thJA p parameter µs 100 µ [V] DS page 4 SPB18P06P G |≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 2008-07-09 ...

Page 5

... Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev 1.4 6 Typ. drain-source on resistance R =f(I DS(on) parameter: V 500 450 -7V 400 - 350 300 -5.5 V 250 200 -5 V 150 100 -4 [ Typ. forward transconductance g =f 125 ° ° [V] GS page 5 SPB18P06P =25 ° -4 -5 - [A] D =25 ° [ 2008-07-09 ...

Page 6

... Forward characteristics of reverse diode I =f parameter Ciss 175 °C, 98% Coss 0 10 Crss - [V] DS page 6 SPB18P06P =-1000 µ max. typ. min. - 100 140 T [° 175 °C, typ 25 °C, 98% 25 °C, typ 0.5 1 1.5 2 2.5 -V [V] SD 180 3 2008-07-09 ...

Page 7

... Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage V =f =-250 µA BR(DSS -60 - Rev 1.4 14 Typ. gate charge V =f(Q GS parameter °C 8 100 °C 125 ° [µ 100 140 180 [°C] j page 7 SPB18P06P =-18.6 A pulsed gate [nC] gate 40 2008-07-09 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 1.4 ). (www.infineon.com page 8 SPB18P06P G 2008-07-09 ...

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