SPD50N03S2L-06 Infineon Technologies, SPD50N03S2L-06 Datasheet - Page 3

• Manufacturer Part Number: SPD50N03S2L-06
• Description: MOSFET N-CH 30V 50A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD50N03S2L-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 85µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 2530pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SPD50N03S2L06INTR

Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev. 2.1
I
I
V
t
Q
g
C
C
C
t
t
t
t
Q
Q
Q
V
Symbol
d(on)
r
d(off)
f
S
SM
rr
fs
SD
iss
oss
rss
gs
gd
g
(plateau) V
rr
Page 3
T
V
V
di
V
I
V
f=1MHz
V
I
R
V
V
V
D
D
C
DS
GS
DD
G
DD
DD
GS
DD
GS
R
F
=50A
=50A,
=25°C
/dt=100A/µs
=15V, I
=3.6Ω
=0V, I
≥2*I
=0V, V
=0 to 10V
=15V, V
=24V, I
=24V, I
=24V, I
Conditions
D
*R
F
F =
DS
=50A
D
D
D
DS(on)max
GS
l
S
=50A
=50A,
=50A
=25V,
,
=10V,
,
min.
36
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1900
SPD50N03S2L-06
17.8
typ.
740
180
0.9
3.2
41
46
72
19
35
24
52
8
6
-
-
2005-02-14
max.
2530 pF
26.7
200
990
270
1.3
50
51
58
12
29
53
36
68
8
-
-
A
V
ns
nC
Unit
S
ns
nC
V