IRLR024TRPBF Vishay, IRLR024TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRLR024TRPBF
• Description: MOSFET N-CH 60V 14A DPAK
• Manufacturer: Vishay

Specifications of IRLR024TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 5V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 14 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 41 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 110 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IRLR024PBFTR; IRLR024TRPBF; IRLR024TRPBFTR

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91322.
Document Number: 91322
S-82993-Rev. B, 19-Jan-09
Re-applied
voltage
Reverse
recovery
current
+
-
R
G
D.U.T
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level and 3 V drive devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
IRLR024, IRLU024, SiHLR024, SiHLU024
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
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