BUK7506-75B,127 NXP Semiconductors, BUK7506-75B,127 Datasheet - Page 2
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BUK7506-75B,127
Manufacturer Part Number
BUK7506-75B,127
Description
MOSFET N-CH 75V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7506-75B127.pdf
(15 pages)
Specifications of BUK7506-75B,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
91nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
75V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.6 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0056 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
159 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057109127::BUK7506-75B::BUK7506-75B
Philips Semiconductors
3. Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 10278
Product data
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
DR
DRM
DS
DGR
GS
tot
stg
j
DS(AL)S
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current (DC)
peak reverse drain current
non-repetitive drain-source avalanche
energy
Limiting values
[1]
[2]
Current is limited by power dissipation chip rating
Continuous current is limited by package
Rev. 02 — 20 September 2002
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
mb
mb
mb
mb
mb
mb
DS
GS
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 20 k
75 V; V
and
mb
= 25 C
3
Figure 1
GS
GS
GS
= 10 V; R
= 10 V;
= 10 V;
p
p
10 s;
10 s
GS
Figure 2
D
= 75 A;
= 50 ;
BUK75/7606-75B
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
[1]
[2]
[2]
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
75
75
159
75
75
638
300
+175
+175
159
75
638
852
20
Unit
V
V
V
A
A
A
A
W
A
A
A
mJ
C
C
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