FDS3170N7 Fairchild Semiconductor, FDS3170N7 Datasheet
FDS3170N7
Manufacturer Part Number
FDS3170N7
Description
MOSFET N-CH 100V 6.7A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS3170N7.pdf
(6 pages)
Specifications of FDS3170N7
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 6.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
77nC @ 10V
Input Capacitance (ciss) @ Vds
2714pF @ 50V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS3170N7TR
FDS3170N7_NL
FDS3170N7_NLTR
FDS3170N7_NLTR
FDS3170N7_NL
FDS3170N7_NLTR
FDS3170N7_NLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS3170N7
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS3170N7-NL
Manufacturer:
FAIRCHILD
Quantity:
2 500
FDS3170N7
100V N-Channel PowerTrench
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
Applications
• Synchronous rectifier
• DC/DC converter
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
θJA
θJC
, T
Device Marking
STG
N-Channel
FDS3170N7
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
DS(ON)
MOSFET
in a small package.
– Continuous
– Pulsed
FDS3170N7
has
Device
Parameter
been
designed
T
A
MOSFET
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1)
Features
• 6.7 A, 100 V. R
• High performance trench technology for extremely
• High power and current handling capability
• Fast switching, low gate charge
• FLMP SO-8 package: Enhanced thermal
low R
performance in industry-standard package size
DS(ON)
5
6
7
8
Tape width
R
DS(ON)
DS(ON)
–55 to +150
12mm
Drain Contact
Ratings
Bottom-side
± 20
100
6.7
3.0
0.5
60
40
= 26 mΩ @ V
= 28 mΩ @ V
4
3
2
1
GS
GS
FDS3170N7 Rev C1(W)
May 2003
= 10 V
= 6.0 V
2500 units
Quantity
Units
°C/W
°C/W
°C
W
V
V
A
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Datasheet:
FDS3170N7 Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1a) (Note 1) Reel Size 13’’ May 2003 = 26 mΩ DS(ON mΩ 6.0 V DS(ON) GS Bottom-side Drain Contact Ratings Units 100 V ± 6 3.0 W °C –55 to +150 °C/W 40 °C/W 0.5 Tape width Quantity 12mm 2500 units FDS3170N7 Rev C1(W) ...
Page 2
... Max Units = 6.7 A 360 D 6.7 100 104 mV/°C 1 ±100 2 2.5 4 –6.9 mV/° 125°C 37 2714 171 82 1 2.5 0.7 1.2 (Note 2) 47 (Note 2) 135 b) 85°C/W when mounted on a minimum pad copper Scale letter size paper FDS3170N7 Rev C1( µ mΩ Ω ...
Page 3
... Dimensional Outline and Pad Layout FDS3170N7 Rev C1(W) ...
Page 4
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 4.0V GS 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS3170N7 Rev C1( 1.2 ...
Page 5
... Figure 10. Single Pulse Maximum 0 TIME (sec 1MHz ISS OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 85°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ °C/W θJA P(pk (t) θ Duty Cycle 100 FDS3170N7 Rev C1(W) 100 1000 1000 ...
Page 6
CROSSVOLT â â â â â Rev. I2 ...