SUM09N20-270-E3 Vishay, SUM09N20-270-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM09N20-270-E3
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM09N20-270-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 580pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM09N20-270-E3; SUM09N20-270-E3TR

SUM09N20-270
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 50
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 5 A
= 10 V
T
0
J
- Junction Temperature (_C)
25
50
75
100
240
230
220
210
200
190
180
125
- 50
150
- 25
I
D
= 1.0 mA
175
T
Drain Source Breakdown vs.
0
New Product
J
- Junction Temperature (_C)
Junction Temperature
25
50
75
100
10
100
1
0
125
Source-Drain Diode Forward Voltage
T
150
0.3
V
J
SD
= 150_C
175
- Source-to-Drain Voltage (V)
0.6
0.9
S-03414—Rev. A, 03-Mar-03
T
Document Number: 72158
J
= 25_C
1.2
1.5