SUM09N20-270-E3 Vishay, SUM09N20-270-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM09N20-270-E3
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM09N20-270-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 580pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM09N20-270-E3; SUM09N20-270-E3TR

Document Number: 72158
S-03414—Rev. A, 03-Mar-03
THERMAL RATINGS
0.01
0.1
2
1
10
10
8
6
4
2
0
-4
0
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Maximum Avalanche and Drain Current
25
0.02
T
C
vs. Case Temperature
50
- Ambient Temperature (_C)
0.05
75
10
-3
100
Normalized Thermal Transient Impedance, Junction-to-Case
125
150
Square Wave Pulse Duration (sec)
10
-2
175
New Product
10
100
0.1
10
-1
1
0.1
by r
Limited
DS(on)
V
DS
1
Single Pulse
T
Safe Operating Area
- Drain-to-Source Voltage (V)
C
= 25_C
1
10
SUM09N20-270
Vishay Siliconix
100
1 ms
10 ms
dc, 100 ms
10 ms
100 ms
www.vishay.com
10
1000
5