SPB11N60C3 Infineon Technologies, SPB11N60C3 Datasheet - Page 7

• Manufacturer Part Number: SPB11N60C3
• Description: MOSFET N-CH 650V 11A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB11N60C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013519; SPB11N60C3INTR; SPB11N60C3XT; SPB11N60C3XTINTR; SPB11N60C3XTINTR

9 Typ. drain-source on resistance
R
parameter: T
11 Typ. transfer characteristics
I
parameter: t
D
Rev. 2.6
DS(on)
= f ( V
Ω
1.6
1.4
1.2
0.8
0.6
0.4
A
40
32
28
24
20
16
12
2
1
8
4
0
0
0
=f(I
GS
2
4V
D
2
); V
p
)
j
=150°C, V
4
= 10 µs
4.5V
DS
4
6
≥ 2 x I
25°C
5V
6
8
GS
10
D
8
x R
12
5.5V
6.5V
8V
20V
DS(on)max
10
14
150°C
12
16
6V
V
I
V
A
D
GS
15
20
Page 7
10 Drain-source on-state resistance
R
parameter : I
12 Typ. gate charge
V
parameter: I
GS
DS(on)
Ω
2.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= f (Q
V
16
12
10
1
0
8
6
4
2
0
-60
0
SPP11N60C3
SPP11N60C3
= f (T
Gate
10
-20
D
D
j
)
= 11 A pulsed
= 7 A, V
)
20
20
98%
0,2
30
typ
V
GS
60
DS max
40
= 10 V
SPB11N60C3
100
0,8 V
50
2007-12-14
DS max
°C
nC
T
Q
j
Gate
180
70