STB85NF55LT4 STMicroelectronics, STB85NF55LT4 Datasheet

MOSFET N-CH 55V 80A D2PAK

STB85NF55LT4

Manufacturer Part Number
STB85NF55LT4
Description
MOSFET N-CH 55V 80A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB85NF55LT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 5V
Input Capacitance (ciss) @ Vds
4050pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Forward Transconductance Gfs (max / Min)
130 S
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5732-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB85NF55LT4
Manufacturer:
ST
Quantity:
20 000
Features
Application
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "single feature size"
strip-based process. The resulting
transistorshows extremely high packing density
for low on-resistance, rugged avalanche
characteristics andless critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Table 1.
August 2009
STB85NF55L
STP85NF55L
Low threshold drive
Switching applications
STB85NF55LT4
Type
STP85NF55L
Order code
Device summary
V
55 V
55 V
DSS
N-channel 55 V, 0.0060 Ω , 80 A, TO-220, D
< 0.008 Ω
< 0.008 Ω
R
max
DS(on)
B85NF55L
P85NF55L
Marking
80 A
80 A
Doc ID 8544 Rev 8
I
D
Figure 1.
STripFET™ II Power MOSFET
Package
TO-220
D²PAK
TO-220
Internal schematic diagram
1
2
3
STB85NF55L
STP85NF55L
D²PAK
Tape and reel
Packaging
Tube
1
3
www.st.com
2
PAK
1/14
14

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STB85NF55LT4 Summary of contents

Page 1

... STMicroelectronis unique "single feature size" strip-based process. The resulting transistorshows extremely high packing density for low on-resistance, rugged avalanche characteristics andless critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order code STB85NF55LT4 STP85NF55L August 2009 STripFET™ II Power MOSFET R DS(on max < 0.008 Ω ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB85NF55L, STP85NF55L 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 5

STB85NF55L, STP85NF55L Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/14 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance Doc ID 8544 Rev 8 STB85NF55L, STP85NF55L ...

Page 7

STB85NF55L, STP85NF55L Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 13. Normalized B Doc ID ...

Page 8

Test circuits 3 Test circuits Figure 14. Switching times test circuit for resistive load D.U. Figure 16. Test circuit for inductive load switching and diode recovery times ...

Page 9

STB85NF55L, STP85NF55L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ...

Page 10

Package mechanical data Dim L20 L30 ∅P Q 10/14 TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 ...

Page 11

STB85NF55L, STP85NF55L Dim D2PAK (TO-263) mechanical data m m Min Typ ...

Page 12

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 13

STB85NF55L, STP85NF55L 6 Revision history Table 8. Document revision history Date 19-May-2009 06-Aug-2009 Revision ® New ECOPACK statement in data 7 Content reworked to improve readability, no technical changes Table 3: Thermal data 8 Doc ID 8544 Rev 8 Revision ...

Page 14

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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