STB85NF55LT4 STMicroelectronics, STB85NF55LT4 Datasheet - Page 4

• Manufacturer Part Number: STB85NF55LT4
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB85NF55LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 5V
• Input Capacitance (ciss) @ Vds: 4050pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Forward Transconductance Gfs (max / Min): 130 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5732-2

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
= 25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 8544 Rev 8
V
R
Figure 14 on page 8
I
V
V
V
V
V
V
V
V
V
V
V
D
DD
DS
DS
GS
DS
GS
GS
GS
GS
G
DS
DS
DD
= 250 µA, V
=4.7 Ω, V
= V
= 10 V, I
= 5 V, I
= 27.5 V, I
= max rating,
= max rating @125 °C
= ±15 V
= 15 V, I
=25 V, f = 1 MHz,
= 0
= 5 V
= 27.5 V, I
Test conditions
Test conditions
Test conditions
GS
, I
D
D
D
= 40 A
D
GS
= 40 A
= 250 µA
D
GS
= 40 A
D
= 40 A,
= 5 V
= 80 A
= 0
STB85NF55L, STP85NF55L
Min.
Min.
Min.
55
-
1
-
-
-
0.0060 0.008
Typ.
165
0.008
4050
Typ.
Typ.
130
860
300
35
70
55
1.6
80
20
45
Max.
Max.
110
Max.
±100
0.01
-
2.5
10
1
Unit
Unit
Unit
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
µA
µA
nA
S
V
V
Ω