2N7002K-7 Diodes Inc, 2N7002K-7 Datasheet - Page 2

• Manufacturer Part Number: 2N7002K-7
• Description: MOSFET N-CH 60V 300MA SOT23-3
• Manufacturer: Diodes Inc

Specifications of 2N7002K-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 800mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4)
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
5. Short duration pulse test used to minimize self-heating effect.
2N7002K
Document number: DS30896 Rev. 4 - 2
1.0
0.6
0.4
0.8
0.2
4. Device mounted on FR-4 PCB.
5. Pulse width ≤10μS, Duty Cycle ≤1%.
0
0
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
1
Characteristic
@T
A
2
Characteristic
Characteristic
= 25°C unless otherwise specified
@T
@T
A
3
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
4
5
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Pulsed (Note 5)
R
Symbol
BV
V
Continuous
DS (ON)
I
I
C
2 of 5
|Y
C
C
GS(th)
DSS
GSS
oss
rss
DSS
iss
fs
|
Min
1.0
60
80
⎯
⎯
⎯
⎯
⎯
⎯
Typ
1.6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Symbol
Symbol
T
J,
V
V
R
P
GSS
DSS
I
T
θ JA
D
Fig. 2 Typical Transfer Characteristics
D
Max
STG
±10
1.0
2.5
2.0
3.0
5.0
V
⎯
⎯
50
25
GS
, GATE-SOURCE VOLTAGE (V)
Unit
ms
μA
μA
pF
pF
pF
Ω
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
-65 to +150
GS
DS
GS
DS
GS
GS
DS
DS
Value
Value
= 25V, V
= 60V, V
= 10V, I
=10V, I
= 0V, I
= ±20V, V
= 10V, I
= 5V, I
±20
300
800
350
357
60
Test Condition
D
D
D
D
D
= 10μA
= 0.05A
GS
GS
= 0.2A
= 1mA
= 0.5A
DS
= 0V
= 0V
= 0V
2N7002K
© Diodes Incorporated
January 2011
Units
Units
°C/W
mW
mA
°C
V
V