2N7002K-7 Diodes Inc, 2N7002K-7 Datasheet - Page 4

• Manufacturer Part Number: 2N7002K-7
• Description: MOSFET N-CH 60V 300MA SOT23-3
• Manufacturer: Diodes Inc

Specifications of 2N7002K-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 800mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

Package Outline Dimensions
2N7002K
Document number: DS30896 Rev. 4 - 2
0.001
0.01
0.1
1
0.1
T
T = 25°C
Single Pulse
J(max)
A
V , DRAIN-SOURCE VOLTAGE (V)
= 150°C
DS
K
J
R
Limited
DS(on)
Fig. 11 Safe Operation Area
F
P
1
W
DC
P
= 10s
W
G
A
H
P
= 1s
W
D
= 100ms
P
W
= 10ms
P
B C
W
K1
P
= 1ms
W
10
= 100µs
L
P
W
= 10 s
µ
100
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M
4 of 5
Fig.10 Forward Transfer Admittance vs. Drain Current
Dim
K1
G
M
A
B
C
D
F
H
K
L
α
J
All Dimensions in mm
0.013
0.903
0.085
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Min
0°
-
SOT23
I , DRAIN CURRENT (A)
D
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.18
8°
-
0.915
0.535
0.400
0.40
1.30
2.40
1.83
2.90
0.05
1.00
0.55
0.11
Typ
-
2N7002K
© Diodes Incorporated
January 2011
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