BSS123-7-F Diodes Inc, BSS123-7-F Datasheet

BSS123-7-F

Manufacturer Part Number

BSS123-7-F

Description

MOSFET N-CH 100V 170MA SOT23-3

Manufacturer

Diodes Inc

Datasheet

1.BSS123-7-F.pdf (3 pages)

Specifications of BSS123-7-F

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

6 Ohm @ 170mA, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

170mA

Vgs(th) (max) @ Id

2V @ 1mA

Input Capacitance (ciss) @ Vds

60pF @ 25V

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

6 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

0.08 S

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.17 A

Power Dissipation

300 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BSS123-FDITR

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Thermal Characteristics

Electrical Characteristics

Maximum Ratings

Drain-Source Voltage

Drain-Gate Voltage R

Gate-Source Voltage

Drain Current (Note 1)

Total Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

OFF CHARACTERISTICS (Note 3)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage, Forward

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Drain-Source Diode Forward Voltage

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Rise Time

Turn-Off Fall Time

Turn-On Delay Time

Turn-Off Delay Time

Features

•

Notes:

BSS123

Document number: DS30366 Rev.8 - 2

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

High Drain-Source Voltage Rating

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 2 and 4)

1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead. Halogen and Antimony Free.

3. Short duration pulse test used to minimize self-heating effect.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

≤ 20KΩ

Characteristic

= 25°C unless otherwise specified

Continuous

Pulsed

TOP VIEW

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

www.diodes.com

Symbol

SOT-23

D(OFF)

DS (ON)

GSSF

D(ON)

1 of 3

GS(th)

DSS

oss

rss

DSS

iss

Mechanical Data

Symbol

•

, T

DGR

GSS

DSS

Gate

θ JA

Min

100

0.8

Equivalent Circuit

⎯

Please click here to visit our online spice models database.

STG

Case: SOT-23

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.008 grams (approximate)

0.84

Typ Max

370

Drain

1.4

Fire Retardants.

⎯

Source

1.0

2.0

6.0

1.3

⎯

Unit

µA

-55 to +150

Value

100

±20

170

680

300

417

GEN

TOP VIEW

= 100V, V

= 20V, V

= 10V, I

= 30V, I

= 0V, I

= 20V, V

= V

= 10V, I

= 4.5V, I

= 0V, I

= 25V, V

= 50Ω, V

, I

Test Condition

= 0.34A

= 250μA

= 0.17A, f = 1.0KHz

= 1mA

= 0.28A,

= 0.17A

= 0V

= 0V, f = 1.0MHz

= 0V

= 10V

Units

°C/W

BSS123

°C

May 2008

Related parts for BSS123-7-F

BSS123-7-F Summary of contents

Page 1

... Unit Test Condition ⎯ 0V 250μ 1.0 µ 100V 20V 20V 2 1mA 6 10V 0.17A GS D Ω 4.5V 0.17A GS D ⎯ 10V 0.17A 1.0KHz 0.34A 25V 0V 1.0MHz 30V 0.28A 50Ω 10V GEN © Diodes Incorporated BSS123 °C May 2008 ...

... I = 250µA D 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 75 100 125 150 -50 C iss C oss C rss www.diodes.com BSS123 0.2 0.3 0.4 0 DRAIN-SOURCE CURRENT (A) D Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current V = 10V 170m D - 100 125 JUNCTION TEMPERATURE (ºC) J Fig. 4 On-Resistance Variation with Temperature © ...

Page 3

... Ordering Information (Note 5) Part Number BSS123-7-F Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K23 Date Code Key Year 2006 Code T Month Jan Feb Code 1 2 Package Outline Dimensions TOP VIEW Suggested Pad Layout Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...

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BSS123-7-F Diodes Inc, BSS123-7-F Datasheet

BSS123-7-F

Specifications of BSS123-7-F

Available stocks

Related parts for BSS123-7-F

BSS123-7-F Summary of contents

Page 1

Page 2

Page 3

Related keywords