BSS123-7-F Diodes Inc, BSS123-7-F Datasheet - Page 2

• Manufacturer Part Number: BSS123-7-F
• Description: MOSFET N-CH 100V 170MA SOT23-3
• Manufacturer: Diodes Inc

Specifications of BSS123-7-F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.08 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.17 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSS123-FDITR

BSS123
Document number: DS30366 Rev.8 - 2
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Fig. 3 Gate Threshold Variation with Temperature
-25
V , DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (ºC)
V , DRAIN-SOURCE VOLTAGE (V)
DS
J
DS
Fig. 1 On-Region Characteristics
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Fig. 5 Typical Capacitance
0
25
10
2
50
15
3
75
100 125 150
V
I = 250µA
D
DS
20
4
= V
C
C
C
iss
oss
rss
GS
25
5
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Fig. 4 On-Resistance Variation with Temperature
Fig. 2 On-Resistance Variation with Gate Voltage
V
I = 170m
D
-25
GS
T , JUNCTION TEMPERATURE (ºC)
= 10V
I , DRAIN-SOURCE CURRENT (A)
J
D
0.2
0
and Drain-Source Current
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100
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© Diodes Incorporated
BSS123
150
May 2008
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