BSS123 Fairchild Semiconductor, BSS123 Datasheet - Page 2

• Manufacturer Part Number: BSS123
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BSS123

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 2.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 73pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.8 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.17 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 0544
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS123N; BSS123NTR

NOTE:
1.
Scale 1 : 1 on letter size paper
2.
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
R
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
R
the drain pins. R
Pulse Test: Pulse Width
G
GS(th)
DSS
T
T
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage.
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
a) 350°C/W when mounted on a
minimum pad..
300 s, Duty Cycle
Parameter
(Note 2)
(Note 2)
2.0%
CA
is determined by the user's board design.
V
I
V
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
T
D
D
F
iF
A
GS
DS
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= 0.17 A,
= 250 A,Referenced to 25 C
= 1 mA,Referenced to 25 C
/d
= 25°C unless otherwise noted
= 10 V, I
= 100 V,
= 100 V,V
= 20 V,
= 20 V,
= V
= 4.5 V,
= 10V,
= 25 V,
= 30 V,
= 0 V,
= 10 V,
= 10 V,
= 15 mV, f = 1.0 MHz
= 30 V,
= 10 V,
= 10 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
,
D
GS
= 0.17 A, T
V
V
V
I
= 0 V T
I
I
I
V
I
V
I
R
I
I
GS
GS
DS
D
D
D
D
D
D
D
S
DS
GEN
GS
= 0.34 A
= 250 A
= 1 mA
= 0.17 A
= 0.17 A
= 0.17 A
= 0.28 A,
= 0.22 A,
= 0 V
= 0 V
= 0 V
= 5 V
= 0 V,
= 6
J
= 125 C
J
= 125 C
(Note 2)
Min Typ Max
0.68
0.08
100
0.8
–2.7
1.7
1.2
1.3
2.2
0.8
3.4
2.2
1.7
2.4
1.8
0.2
0.3
0.8
97
73
17
11
7
9
3
0.17
3.4
2.5
1.3
60
10
10
12
18
31
1
50
2
6
5
BSS123 Rev G(W)
Units
mV/ C
mV/ C
nC
nC
nC
nC
nA
nA
pF
pF
pF
nS
ns
ns
ns
ns
V
V
A
S
A
V
A
A