BSS123 Fairchild Semiconductor, BSS123 Datasheet - Page 4

• Manufacturer Part Number: BSS123
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BSS123

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 2.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 73pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.8 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.17 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 0544
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS123N; BSS123NTR

Typical Characteristics
0.001
0.01
0.1
Figure 9. Maximum Safe Operating Area.
0.001
10
1
Figure 7. Gate Charge Characteristics.
0.01
8
6
4
2
0
0.1
1
0
0.0001
1
R
SINGLE PULSE
I
R
DS(ON)
D
= 0.17A
JA
V
T
GS
A
= 350
= 25
LIMIT
D = 0.5
= 10V
0.2
0.4
o
o
0.1
0.05
C
C/W
0.02
V
0.01
DS
DC
, DRAIN-SOURCE VOLTAGE (V)
10s
10
Q
SINGLE PULSE
0.001
g
, GATE CHARGE (nC)
1s
0.8
100ms
10ms
Figure 11. Transient Thermal Response Curve.
1ms
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
1.2
V
DS
100
= 30V
100 s
0.01
1.6
70V
50V
1000
2
0.1
t
1
, TIME (sec)
100
80
60
40
20
5
4
3
2
1
0
0.001
0
0
Figure 8. Capacitance Characteristics.
C
RSS
1
Figure 10. Single Pulse Maximum
C
OSS
0.01
20
V
Power Dissipation.
DS
C
, DRAIN TO SOURCE VOLTAGE (V)
ISS
0.1
10
40
t
1
, TIME (sec)
1
P(pk)
Duty Cycle, D = t
T
R
J
R
- T
JA
60
JA
(t) = r(t) * R
A
t
= 350
1
= P * R
10
t
100
2
o
C/W
SINGLE PULSE
R
JA
80
JA
1
T
JA
100
(t)
/ t
A
= 350°C/W
f = 1 MHz
V
= 25°C
BSS123 Rev G(W)
2
GS
= 0 V
1000
1000
100