FDV302P Fairchild Semiconductor, FDV302P Datasheet - Page 4

• Manufacturer Part Number: FDV302P
• Description: MOSFET P-CH 25V 120MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of FDV302P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 120mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 11pF @ 10V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.135 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.12 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDV302PTR

Typical Electrical And Thermal Characteristics
0.05
0.02
0.01
0.5
0.2
0.1
8
6
4
2
0
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
0
1
1
I
D
SINGLE PULSE
R
0.005
0.002
0.001
0.05
0.02
0.01
= -0.2A
V
0.5
0.2
0.1
JA
0.0001
T = 25°C
GS
1
A
0.1
= 357 °C/W
2
= -2.7V
- V
D = 0.5
0.05
0.02
0.01
0.2
0.1
DS
Q
Single Pulse
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
0.2
5
0.001
Figure 11. Transient Thermal Response Curve
V
DS
= -5V
0.3
10
-15
15
0.4
-10
0.01
20
30
0.5
40
0.1
t , TIME (sec)
1
25
15
10
5
3
2
1
0.1
Figure 8. Capacitance Characteristics.
0.001
5
4
3
2
1
0
Figure 10. Single Pulse Maximum Power
f = 1 MHz
V
GS
1
= 0 V
0.3
0.01
-V
DS
.
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
0.1
P(pk)
Dissipation.
1
1 0
T - T
R
R
Duty Cycle, D = t
J
JA
JA
t
1
A
2
(t) = r(t) * R
= 357 °C/W
t
1
= P * R
2
5
JA
1
R
SINGLE PULSE
/t
1 0 0
10
(t)
2
JA
JA
T = 25°C
A
=357° C/W
10
C iss
C oss
C rss
FDV302P REV. F
3 0 0
15
100
25
300