FDV302P Fairchild Semiconductor, FDV302P Datasheet - Page 4
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FDV302P
Manufacturer Part Number
FDV302P
Description
MOSFET P-CH 25V 120MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDV302P.pdf
(4 pages)
Specifications of FDV302P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
120mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.31nC @ 4.5V
Input Capacitance (ciss) @ Vds
11pF @ 10V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.135 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.12 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDV302PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Quantity:
3 000
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Manufacturer:
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Part Number:
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Typical Electrical And Thermal Characteristics
0.05
0.02
0.01
0.5
0.2
0.1
8
6
4
2
0
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
0
1
1
I
D
SINGLE PULSE
R
0.005
0.002
0.001
0.05
0.02
0.01
= -0.2A
V
0.5
0.2
0.1
JA
0.0001
T = 25°C
GS
1
A
0.1
= 357 °C/W
2
= -2.7V
- V
D = 0.5
0.05
0.02
0.01
0.2
0.1
DS
Q
Single Pulse
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
0.2
5
0.001
Figure 11. Transient Thermal Response Curve
V
DS
= -5V
0.3
10
-15
15
0.4
-10
0.01
20
30
0.5
40
0.1
t , TIME (sec)
1
25
15
10
5
3
2
1
0.1
Figure 8. Capacitance Characteristics.
0.001
5
4
3
2
1
0
Figure 10. Single Pulse Maximum Power
f = 1 MHz
V
GS
1
= 0 V
0.3
0.01
-V
DS
.
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
0.1
P(pk)
Dissipation.
1
1 0
T - T
R
R
Duty Cycle, D = t
J
JA
JA
t
1
A
2
(t) = r(t) * R
= 357 °C/W
t
1
= P * R
2
5
JA
1
R
SINGLE PULSE
/t
1 0 0
10
(t)
2
JA
JA
T = 25°C
A
=357° C/W
10
C iss
C oss
C rss
FDV302P REV. F
3 0 0
15
100
25
300