BS270 Fairchild Semiconductor, BS270 Datasheet - Page 5

• Manufacturer Part Number: BS270
• Description: MOSFET N-CH 60V 400MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BS270

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.32 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.4 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
0.005
0.05
0.01
0.05
0.02
0.01
0.5
0.1
0.5
0.2
0.1
0.0001
3
2
1
1
1
0.01
SINGLE PULSE
0.02
Figure 13. Maximum Safe Operating
0.05
V
T
D = 0.5
0.1
2
A
0.2
GS
= 25°C
= 10V
V
Area.
DS
Single Pulse
, DRAIN-SOURCE VOLTAGE (V)
0.001
5
10
Figure 14. Transient Thermal Response Curve.
20
0.01
30
(continued)
60 80
t , TIME (sec)
0.1
1
1
P(pk)
10
R
T - T
R
Duty Cycle, D = t
J
JA
JA
t
1
A
(t) = r(t) * R
= (See Datasheet)
t
= P * R
2
JA
100
1
/t
(t)
JA
2
300
BS270.SAM