FDG316P Fairchild Semiconductor, FDG316P Datasheet
FDG316P
Specifications of FDG316P
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FDG316P Summary of contents
Page 1
... Compact industry standard SC70-6 surface mount package 25°C unless otherwise noted A Parameter (Note 1a) (Note 1a) (Note 1b) (Note 1b) Device Reel Size FDG316P 7’’ December 2001 = 0. -10 V DS(ON 0. -4.5 V. DS(ON Ratings Units - -1 0.75 W 0.48 -55 to +150 C C/W 260 Tape W idth Quantity 8m m 3000 units FDG316P Rev. D ...
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... -1.6 A,T =125 - 1.0 MHz GEN -0.42 A (Note determined by the user's board design. CA Min Typ Max Units -30 V -34 mV 100 nA -100 3.5 mV/ C 0.16 0.19 0.22 0.31 0.23 0. 165 3 0.6 nC 0.8 nC -0.42 A 0.75 -1.2 V FDG316P Rev. D ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current = -4.0V -4.5V -5.0V -6.0V -7.0V -8.0V -10V DIRAIN CURRENT ( -0. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 1 BODY DIODE FORWARD VOLTAGE (V) SD and Temperature. FDG316P Rev 1.6 ...
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... Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 260 C 0.01 0 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( =260°C/W JA P(pk ( Duty Cycle 100 FDG316P Rev 1000 300 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...