FDG316P Fairchild Semiconductor, FDG316P Datasheet - Page 2

• Manufacturer Part Number: FDG316P
• Description: MOSFET P-CH 30V 1.6A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG316P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 190 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 165pF @ 15V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 0.75 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Electrical Characteristics
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSS
GSS
D(on)
d(on)
r
d(off)
f
S
Symbol
FS
of the drain pins. R
BV
V
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
a) 170 C/W when mounted on a 1 in
b) 260 C/W when mounted on a minimum pad.
GS(th)
DSS
T
T
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
(Note 2)
2
pad of 2oz copper.
(Note 2)
CA
is determined by the user's board design.
T
A
= 25°C unless otherwise noted
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 A, Referenced to 25 C
= -250 A, Referenced to 25 C
= -24 V, V
= V
= -5 V, I
= -15 V, V
= -15 V, I
= 0 V, I
= 16 V, V
= -16 V, V
= -10 V, I
= -10 V, I
= -4.5 V, I
= -4.5 V, V
= -15 V, I
= -10 V, R
= -10 V
= 0 V, I
Test Conditions
GS
, I
D
S
D
D
= -250 A
= -0.42 A
D
= -250 A
D
D
D
DS
= -0.5 A
D
GS
GS
DS
GEN
DS
= -1.6 A
= -1.6 A,T
= -1 A,
= -1.6 A,
= -1.3 A
= 0 V
= 0 V
= 0 V
= 0 V,
= -5 V
= 6
J
=125 C
(Note 2)
Min
-30
-1
-3
Typ Max Units
0.16
0.22
0.23
0.75
-1.6
165
-34
3.5
3.5
0.6
0.8
60
25
14
3
8
9
2
-0.42
-100
0.19
0.31
0.30
100
-1.2
20
20
30
10
-1
-3
5
FDG316P Rev. D
mV/ C
mV/ C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A