FDC640P Fairchild Semiconductor, FDC640P Datasheet
FDC640P
Manufacturer Part Number
FDC640P
Description
MOSFET P-CH 20V 4.5A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC640P.pdf
(5 pages)
Specifications of FDC640P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
53 mOhm @ 4.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
890pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.053 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
16 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC640P
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC640P
Manufacturer:
FAIRCHILD
Quantity:
5 321
Company:
Part Number:
FDC640P
Manufacturer:
Fairchild Semiconductor
Quantity:
77 254
Company:
Part Number:
FDC640P
Manufacturer:
FSC
Quantity:
1 626
Part Number:
FDC640P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC640P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDC640P_NL
Manufacturer:
PANASONIC
Quantity:
3 323
FDC640P
P-Channel 2.5V PowerTrench Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
2001 Fairchild Semiconductor International
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
.640
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
TM
S
– Continuous
– Pulsed
FDC640P
Device
Parameter
D
D
G
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–4.5 A, –20 V
Rugged gate rating ( 12V)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
Ratings
DS(ON)
DS(ON)
–4.5
–20
–20
1.6
0.8
78
30
12
= 0.053
= 0.080
January 2001
6
5
4
@ V
@ V
GS
GS
3000 units
FDC640P Rev E(W)
Quantity
= –4.5 V
= –2.5 V
Units
C/W
C/W
W
V
V
A
C
Related parts for FDC640P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDC640P Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ January 2001 R = 0.053 @ V = –4.5 V DS(ON 0.080 @ V = –2.5 V DS(ON Ratings Units – –4.5 A –20 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units FDC640P Rev E(W) ...
Page 2
... –1 determined by the user's board design. 2.0% Min Typ Max Units –20 V –14 mV/ C –1 100 nA –100 nA –0.6 –1.0 –1 mV/ C 0.039 0.053 0.062 0.080 0.053 0.077 =125 C J – 890 pF 244 pF 123 –1.3 A –0.7 –1.2 V (Note 2) FDC640P Rev E(W) A ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.0V -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -2. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC640P Rev E( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 156°C/W JA P(pk ( Duty Cycle 100 FDC640P Rev E(W) 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...