ZXMN3A01E6TC Diodes Zetex, ZXMN3A01E6TC Datasheet - Page 2

• Manufacturer Part Number: ZXMN3A01E6TC
• Description: MOSFET N-CHAN 30V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMN3A01E6TC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ZXMN3A01E6
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V GS =10V; T A =25°C (b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
SYMBOL
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
T j :T stg
SYMBOL
R JA
R JA
2
-55 to +150
VALUE
LIMIT
13.6
113
3.0
2.4
2.4
2.4
1.1
8.8
1.7
70
30
10
10
20
ISSUE 2 - JULY 2002
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
°C
W
W
V
V
A
A
A
A