ZXMN3A01E6TC Diodes Zetex, ZXMN3A01E6TC Datasheet - Page 5

• Manufacturer Part Number: ZXMN3A01E6TC
• Description: MOSFET N-CHAN 30V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMN3A01E6TC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISSUE 2 - JULY 2002
0.1
0.1
0.1
10
10
1
1
1
2.0
T = 150°C
T = 25°C
V
Typical Transfer Characteristics
T = 25°C
On-Resistance v Drain Current
0.1
DS
V
= 10V
V
2.5
DS
GS
2.5V
Output Characteristics
0.1
Drain-Source Voltage (V)
I
Gate-Source Voltage (V)
D
T = 25°C
3.0
Drain Current (A)
10V
1
3.5
3V
7V
1
3.5V
4.0
5V
TYPICAL CHARACTERISTICS
V
4V
GS
10
4.5
4.5V
10
4V
3V
4.5V
3.5V
2.5V
5V
V
10V
7V
GS
5.0
5
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
Normalised Curves v Temperature
1
1
-50
0.4
Source-Drain Diode Forward Voltage
T = 150°C
T = 150°C
0.1
Tj Junction Temperature (°C)
V
V
DS
SD
Output Characteristics
0.6
Drain-Source Voltage (V)
Source-Drain Voltage (V)
0
ZXMN3A01E6
10V
1
0.8
V
I
50
D
T = 25°C
GS
= 2.5A
V
I
D
GS
= 10V
= 250uA
7V
= V
DS
5V
100
V
1.0
GS
R
10
DS(on)
V
3.5V
GS(th)
4.5V
3V
2.5V
2V
4V
150
1.2