FQT3P20TF Fairchild Semiconductor, FQT3P20TF Datasheet - Page 3

• Manufacturer Part Number: FQT3P20TF
• Description: MOSFET P-CH 200V 0.67A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQT3P20TF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 335mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 670mA
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Forward Transconductance Gfs (max / Min): 0.7 S
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 0.67 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
400
300
200
100
10
10
10
-1
8
6
4
2
0
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : -5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
2
-V
-V
DS
DS
-I
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
D
10
, Drain Current [A]
0
0
V
GS
C
C
C
= - 20V
rss
iss
oss
4
V
GS
= - 10V
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
※ Note : T
= C
= C
= C
6
1
1
C
gs
gd
ds
= 25℃
+ C
+ C
gd
gd
※ Notes :
(C
J
1. V
2. f = 1 MHz
= 25℃
ds
= shorted)
GS
= 0 V
8
10
10
10
10
12
10
-1
-1
8
6
4
2
0
0
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
0.4
1
Variation vs. Source Current
150℃
0.6
4
-V
-V
2
Q
and Temperature
25℃
SD
GS
150℃
G
0.8
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
V
DS
25℃
V
DS
= -160V
3
1.0
V
DS
= -100V
= -40V
6
1.2
4
-55℃
1.4
※ Notes :
※ Notes :
5
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
1.6
= -40V
= 0V
D
6
= -2.8 A
1.8
2.0
Rev. A, May 2001
10
7