FQT3P20TF Fairchild Semiconductor, FQT3P20TF Datasheet - Page 7
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FQT3P20TF
Manufacturer Part Number
FQT3P20TF
Description
MOSFET P-CH 200V 0.67A SOT-223
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQT3P20TF.pdf
(8 pages)
Specifications of FQT3P20TF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 Ohm @ 335mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
670mA
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
2.7 Ohms
Forward Transconductance Gfs (max / Min)
0.7 S
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 0.67 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
©2001 Fairchild Semiconductor Corporation
Package Dimensions
(0.95)
2.30 TYP
4.60
6.50
3.00
0.25
0.20
0.10
SOT-223
0.70
(0.95)
0.10
MAX1.80
0.25
+0.10
–0.05
0.06
+0.04
–0.02
Rev. A, May 2001