FDFMA2P857 Fairchild Semiconductor, FDFMA2P857 Datasheet - Page 5

• Manufacturer Part Number: FDFMA2P857
• Description: MOSFET P-CH 20V 3A MICROFET2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P857

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2P857TR

FDFMA2P857 Rev.B1
Typical Characteristics
Figure 11.
0.001
0.01
0.01
100
0.1
0.1
Figure 7. G
10
1
5
4
3
2
1
0
1
3
0.1
0
0
R
I
D
DS(ON)
Figure 9.
V
R
T A = 25 o C
SINGLE PULSE
= -3A
GS
θ
JA = 173
V DS , DRAIN to SOURCE VOLTAGE (V)
100
= -4.5V
Schottky Diode Forward Current
LIMITED
V
1
T
F,
J
ate Charge Characteristics
Operating Area
o C/W
= 125
FORWARD VOLTAGE(mV)
Q
Forward Bias Safe
g
V
200
, GATE CHARGE(nC)
1
DS
o
C
= -5V
2
300
25
T
A
o
C
-10V
3
= 25°C unless otherwise noted
400
10
85
-15V
o
C
100us
10s
1ms
10ms
100ms
DC
4
1s
500
100
600
5
5
0.0001
Figure 12.
0.001
200
100
0.01
0.1
700
600
500
400
300
200
100
10
0.1
Figure 8.
10
10
1
1
0
0
Figure 10.
-4
0
C
SINGLE PULSE
R
rss
θ
10
JA = 173
-V
-3
DS
Schottky Diode Reverse Current
5
4
Power Dissipation
Capacitance Characteristics
, DRAIN TO SOURCE VOLTAGE (V)
C oss
10
V
o
Single Pulse Maximum
t, PULSE WIDTH (s)
R
C/W
-2
, REVERSE VOLTAGE (V)
10
10
8
-1
C iss
15
10
12
0
20
10
T
J
T
T
J
1
= 125
J
= 85
= 25
f = 1MHz
V
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16
GS
o
10
o
o
25
C
C
= 0V
C
2
10
20
30
3