FDC633N_F095 Fairchild Semiconductor, FDC633N_F095 Datasheet
FDC633N_F095
Manufacturer Part Number
FDC633N_F095
Description
MOSFET N-CH 30V 5.2A 6-SSOT
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDC633N_F095.pdf
(5 pages)
Specifications of FDC633N_F095
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
42 mOhm @ 5.2A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 4.5V
Input Capacitance (ciss) @ Vds
538pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings
Symbol Parameter
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1998 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
FDC633N
N-Channel Enhancement Mode Field Effect Transistor
This
transistors is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMICA cards, and other
battery powered circuits where fast switching,low in-line
power loss and resistance to transients are needed in a very
small outline surface mount package.
General Description
,T
JA
JC
STG
SOT-23
N-Channel enhancement mode power field effect
SuperSOT
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
D
SuperSOT
TM
-6
D
T
A
= 25°C unless otherwise noted
pin 1
TM
-6
S
D
D
SuperSOT
(Note 1)
(Note 1a)
(Note 1a)
(Note 1a)
G
(Note 1b)
TM
-8
Features
5.2 A, 30 V. R
SuperSOT
superior thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
SO-8
TM
-6 package design using copper lead frame for
2
1
3
3
R
DS(ON)
DS(ON)
FDC633N
-55 to 150
5.2
1.6
0.8
30
±8
16
78
30
= 0.042
= 0.054
SOT-223
@ V
@ V
GS
GS
6
5
4
= 4.5 V
= 2.5 V.
DS(ON)
SOIC-16
March 1998
FDC633N Rev.C
.
Units
°C/W
°C/W
W
°C
V
V
A
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FDC633N_F095 Summary of contents
Page 1
... Operating and Storage Temperature Range STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient JA R Thermal Resistance, Junction-to-Case JC © 1998 Fairchild Semiconductor Corporation Features 5 SuperSOT superior thermal and electrical capabilities. High density cell design for extremely low R Exceptional on-resistance and maximum DC current capability. TM SuperSOT -8 SO-8 ...
Page 2
ELECTRICAL CHARACTERISTICS (T Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temp. Coefficient DSS J I Zero Gate Voltage Drain Current DSS I Gate - Body Leakage, Forward GSSF Gate - Body Leakage, Reverse ...
Page 3
Typical Electrical Characteristics 4.5V GS 3.0 2 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 4.5V 1.4 ...
Page 4
Typical Electrical Characteristics (continued 5. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics 0.5 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...