FDC633N_F095 Fairchild Semiconductor, FDC633N_F095 Datasheet - Page 3

• Manufacturer Part Number: FDC633N_F095
• Description: MOSFET N-CH 30V 5.2A 6-SSOT
• Manufacturer: Fairchild Semiconductor

Specifications of FDC633N_F095

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 538pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
20
15
10
5
0
15
12
1.6
1.4
1.2
0.8
0.6
Figure 5. Transfer Characteristics.
0
Figure 1. On-Region Characteristics.
9
6
3
0
1
Figure 3. On-Resistance Variation
-50
0
V
DS
V
V
GS
I = 5.2A
= 5V
D
0.5
GS
-25
= 4.5V
= 4.5V
0.5
V
V
DS
with Temperature.
3.0
GS
T , JUNCTION TEMPERATURE (°C)
0
, DRAIN-SOURCE VOLTAGE (V)
J
2.5
, GATE TO SOURCE VOLTAGE (V)
1
2.0
25
1
1.5
50
1.5
1.5
T = -55°C
75
J
2
100
2.5
2
125°C
125
25°C
3
2.5
150
1.8
1.6
1.4
1.2
0.8
0.0001
0.15
0.12
0.09
0.06
0.03
2
1
0.001
0.01
0
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
Figure 6. Body Diode Forward Voltage
0
0.1
15
1
1
0
V
GS
= 0V
V
GS
0.2
V
SD
= 2.0V
5
V
, BODY DIODE FORWARD VOLTAGE (V)
2
GS
Gate-to-Source Voltage.
Drain Current and Gate Voltage.
Variation with Source Current
I
and Temperature.
D
, GATE TO SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
0.4
T = 125°C
J
2.5
10
25°C
0.6
3
-55°C
3.0
T = 125°C
A
T = 25°C
A
3.5
0.8
15
4
4.5
I = 2.5A
D
1
FDC633N Rev.C
20
1.2
5