SI2307BDS-T1-E3 Vishay, SI2307BDS-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI2307BDS-T1-E3
• Description: MOSFET P-CH 30V 2.5A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI2307BDS-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 78 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.078 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -3.2A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Power Dissipation Pd: 1.25W
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.078Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2307BDS-T1-E3TR

Si2307BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
10
0.3
0.2
0.1
0.0
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
I
D
0
- Source-to-Drain Voltage (V)
= 250 µA
T
Threshold Voltage
T
J
0.4
J
= 150 °C
- Temperature (°C)
25
0.6
50
75
0.8
0.001
0.01
100
0.1
100
10
T
1
J
0.1
= 25 °C
1.0
* V
Limited by R
125
Safe Operating Area, Junction-to-Case
GS
> minimum V
150
Single Pulse
1.2
V
Square Wave Pulse Duration (s)
T
DS
A
= 25 °C
- Drain-to-Source Voltage (V)
DS(on)*
1
GS
at which R
10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
DS(on)
10
8
6
4
2
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
10 µs
100 µs
1 ms
10 ms
100 ms
10 s, 1 s
DC, 100 s
0.1
V
2
GS
100
- Gate-to-Source Voltage (V)
Single Pulse Power
4
T
1
A
Time (s)
= 25 °C
I
D
S-80427-Rev. C, 03-Mar-08
= 3.2 A
Document Number: 72699
6
10
100
8
10
1000