SI2307BDS Vishay, SI2307BDS Datasheet

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SI2307BDS

Manufacturer Part Number
SI2307BDS
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 5 s.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72699
S-80427-Rev. C, 03-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
V
DS
- 30
(V)
b
0.130 at V
0.078 at V
a
R
DS(on)
J
= 150 °C)
GS
b
c
GS
= - 4.5 V
(Ω)
= - 10 V
Ordering Information: Si2307BDS-T1-E3 (Lead (Pb)-free)
P-Channel 30-V (D-S) MOSFET
b
b
G
S
A
1
2
I
D
- 3.2
- 2.5
= 25 °C, unless otherwise noted
Si2307BDS (L7)*
* Marking Code
(A)
Si2307BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
T
T
T
T
(SOT-23)
Top View
TO-236
A
A
A
A
b
= 25 °C
= 70 °C
= 25 °C
= 70 °C
3
FEATURES
• Halogen-free Option Available
D
Symbol
Symbol
T
R
TrenchFET
J
V
V
I
P
, T
DM
I
I
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
- 1.25
- 3.2
- 2.6
1.25
130
5 s
0.8
80
- 55 to 150
± 20
- 30
- 12
Steady State
Maximum
- 0.75
- 2.5
- 2.0
0.75
0.48
100
166
Vishay Siliconix
Si2307BDS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI2307BDS Summary of contents

Page 1

... PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.078 0.130 4 Ordering Information: Si2307BDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) b Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si2307BDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Gate Charge Document Number: 72699 S-80427-Rev. C, 03-Mar- 700 600 500 400 300 200 GS 100 Si2307BDS Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si2307BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0 250 µA D 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.6 0.5 0.4 0.3 0.2 0 °C J 0.0 0.8 1.0 1 100 125 150 100 Limited by R DS(on)* ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72699. Document Number: 72699 S-80427-Rev. C, 03-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si2307BDS Vishay Siliconix Notes ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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