SFU9220TU_F080 Fairchild Semiconductor, SFU9220TU_F080 Datasheet - Page 208

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SFU9220TU_F080

Manufacturer Part Number
SFU9220TU_F080
Description
MOSFET P-CH 200V 3.1A IPAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SFU9220TU_F080

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 1.6A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.1A
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251 (2 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
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Discrete
Discrete IGBT (II)
SG H 20 N 120 RUF D
(Continued)
L: Logic Level
LS: Low Saturation
UF: Ultrafast
RUF: Rugged Ultrafast
P: TO-220
R: D-PAK
S: TO-220F
U: I-PAK
H: TO-3P
W: D
F: TO-3PF
L: TO-264
M: SOT-223
D, DG3: Built-in FRD
Suffix
Voltage Rating (x10)
N: N-Channel
Current Rating
Package Type
Fairchild IGBT
2
-PAK
8-15
Ordering Guides

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