SFU9220TU_F080 Fairchild Semiconductor, SFU9220TU_F080 Datasheet - Page 55

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SFU9220TU_F080

Manufacturer Part Number
SFU9220TU_F080
Description
MOSFET P-CH 200V 3.1A IPAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SFU9220TU_F080

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 1.6A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.1A
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251 (2 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
www.fairchildsemi.com
TO-262 (I
FQI27P06
FQI17P06
SFI9Z34
FQI11P06
SFI9Z24
SFI2955
FQI7P06
SFI9Z14
Products
2
PAK) (Continued)
Min. (V)
BV
-60
-60
-60
-60
-60
-60
-60
-60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
0.175
10V
0.07
0.12
0.14
0.28
0.41
0.3
0.5
R
DS(ON)
4.5V
Max (Ω) @ V
2-50
2.5V
GS
=
1.8V
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
33
21
30
13
15
15
9
= 5V
I
D
11.4
9.7
9.4
6.7
27
17
18
7
(A)
MOSFETs
P
D
120
79
82
53
49
49
45
38
(W)

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