FQD4P25TM_WS Fairchild Semiconductor, FQD4P25TM_WS Datasheet

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FQD4P25TM_WS

Manufacturer Part Number
FQD4P25TM_WS
Description
MOSFET P-CH 250V 3.1A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQD4P25TM_WS

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.1 Ohm @ 1.55A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
420pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
2.1 Ohms
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.1 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD4P25TM_WSFQD4P25TM-WS
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
FQD4P25TM_WSFQD4P25TM-WS
0
©2000 Fairchild Semiconductor International
FQD4P25 / FQU4P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
resistance,
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
provide
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
superior
= 25°C) *
Parameter
= 25°C)
Parameter
G
T
D
C
C
C
switching
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -3.1A, -250V, R
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 10.3 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU Series
I-PAK
FQD4P25 / FQU4P25
Typ
--
--
--
DS(on)
-55 to +150
= 2.1
-1.96
-12.4
-250
0.36
-3.1
280
-3.1
-5.5
300
4.5
2.5
45
30
G
@V
! ! ! !
! ! ! !
Max
2.78
110
50
GS
QFET
QFET
QFET
QFET
December 2000
= -10 V
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
! ! ! !
! ! ! !
D
S
! ! ! !
! ! ! !
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. A2, December 2000
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

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FQD4P25TM_WS Summary of contents

Page 1

... JC R Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Features • -3.1A, -250V, R • Low gate charge ( typical 10 nC) • Low Crss ( typical 10.3 pF) • Fast switching superior switching • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 46.6mH -3.1A -50V -4.0A, di/dt 300A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -250 -200 125° ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 700 600 500 400 300 200 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International ※ Notes : 1. 250μ s Pulse Test 25℃ 10V 0 10 ※ Note : T = 25℃ ...

Page 4

... 150 Single Pulse Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Note : 0 -250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 3.5 3.0 100 1.5 1.0 0.5 ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 6.60 5.34 (0.50) (4.34) MAX0.96 2.30TYP [2.30 0.20] ©2000 Fairchild Semiconductor International DPAK 0.20 0.30 (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 (5.34) (5.04) (1.50) (2XR0.25) 0.76 0.10 ...

Page 8

... Package Dimensions (Continued) 6.60 0.20 5.34 0.20 (0.50) (4.34) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2000 Fairchild Semiconductor International IPAK (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Rev. A2, December 2000 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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