FQD4P25TM_WS Fairchild Semiconductor, FQD4P25TM_WS Datasheet - Page 8

• Manufacturer Part Number: FQD4P25TM_WS
• Description: MOSFET P-CH 250V 3.1A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD4P25TM_WS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 Ohm @ 1.55A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.1 Ohms
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Package Dimensions
0.76
MAX0.96
[2.30 0.20]
2.30TYP
(0.50)
0.10
6.60
5.34
(4.34)
(Continued)
0.20
0.20
[2.30 0.20]
2.30TYP
(0.50)
IPAK
0.50
2.30
0.50
0.10
Rev. A2, December 2000
0.20
0.10