IRLS630A Fairchild Semiconductor, IRLS630A Datasheet - Page 5

• Manufacturer Part Number: IRLS630A
• Description: MOSFET N-CH 200V 6.5A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of IRLS630A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 3.25A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 755pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5V
5V
12V
Vary t
required peak I
POWER MOSFET
3mA
N-CHANNEL
p
to obtain
* Current Regulator ”
R
R
G
G
200nF
D
t
p
V
V
Current Sampling (I
in
V
DS
50K!
out
V
GS
Resistor
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
R
1
300nF
Fig 13. Resistive Switching Test Circuit & Waveforms
DUT
DUT
L
I
G
L
Fig 12. Gate Charge Test Circuit & Waveform
D
)
Current Sampling (I
Same Type
DUT
R
as DUT
C
L
Resistor
( 0.5 rated V
R
2
V
DD
V
DD
D
DS
)
V
)
DS
V
V
BV
5V
V
GS
out
V
in
DSS
I
DD
AS
10%
E
90%
Q
AS
t
gs
d(on)
=
t
----
on
1
2
t
r
L
L
Q
I
Q
I
D
g
AS
gd
(t)
t
Charge
p
2
IRLS630A
--------------------
BV
BV
DSS
t
d(off)
DSS
t
-- V
off
t
f
DD
Time
V
DS
(t)