IRLS630A Fairchild Semiconductor, IRLS630A Datasheet - Page 6

• Manufacturer Part Number: IRLS630A
• Description: MOSFET N-CH 200V 6.5A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of IRLS630A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 3.25A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 755pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLS630A
( Driver )
( DUT )
( DUT )
V
V
I
GS
S
DS
V
GS
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
R
G
DUT
Driver
I
I
FM
D =
S
, Body Diode Forward Current
--------------------------
Forward Voltage Drop
Gate Pulse Width
Gate Pulse Period
Body Diode
Same Type
as DUT
Body Diode Recovery dv/dt
V
• dv/dt controlled by (R
• I
+
--
V
DS
S
f
controlled by Duty Factor (D(
Body Diode Reverse Current
I
RM
L
G
(
di/dt
V
V
5V
POWER MOSFET
DD
DD
N-CHANNEL