FQD17P06TM Fairchild Semiconductor, FQD17P06TM Datasheet - Page 6
![MOSFET P-CH 60V 12A DPAK](/photos/5/38/53880/261-dpak_sml.jpg)
FQD17P06TM
Manufacturer Part Number
FQD17P06TM
Description
MOSFET P-CH 60V 12A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQD17P06TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
135 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.135 Ohms
Forward Transconductance Gfs (max / Min)
8.7 S
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 12 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQD17P06TM
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQD17P06TM
Manufacturer:
FSC
Quantity:
30 000
©2009 Fairchild Semiconductor Corporation
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
SD
SD
GS
GS
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
D =
D =
D =
SD
SD
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Body Diode
Body Diode
Compliment of DUT
Compliment of DUT
V
V
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
+
+
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
(N-Channel)
(N-Channel)
SD
SD
SD
SD
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
Rev. A3. January 2009