FQD17P06TM Fairchild Semiconductor, FQD17P06TM Datasheet - Page 8

• Manufacturer Part Number: FQD17P06TM
• Description: MOSFET P-CH 60V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD17P06TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 135 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Forward Transconductance Gfs (max / Min): 8.7 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQD17P06TM

©2009 Fairchild Semiconductor Corporation
Package Dimensions
0.76
MAX0.96
[2.30 0.20]
2.30TYP
(0.50)
0.10
6.60
5.34
(4.34)
(Continued)
0.20
0.20
[2.30 0.20]
2.30TYP
(0.50)
IPAK
0.50
2.30
0.50
0.10
0.20
Rev. A3.January 2009
0.10