ZXMN7A11GTA Diodes Zetex, ZXMN7A11GTA Datasheet
首页 Discrete Semiconductor Products MOSFETs, GaNFETs - Single ZXMN7A11GTA
Manufacturer Part Number
ZXMN7A11GTA
Description
MOSFET N-CH 70V 3.8A SOT-223
Manufacturer
Diodes Zetex
Specifications of ZXMN7A11GTA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 4.4A, 10V
Drain To Source Voltage (vdss)
70V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
7.4nC @ 10V
Input Capacitance (ciss) @ Vds
298pF @ 40V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.13Ohm
Drain-source On-volt
70V
Gate-source Voltage (max)
±20V
Continuous Drain Current
3.8A
Power Dissipation
3.9W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN7A11GTR
Available stocks
ZXMN7A11G
70V N-channel enhancement mode MOSFET
Summary
V
I
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
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•
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•
Applications
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Ordering information
Device marking
ZXMN
7A11
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
D
Device
ZXMN7A11GTA
ZXMN7A11GTC
DSS
=3.8A
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
Class D audio output stages
=70V : R
DS(on)
=0.13
Reel size
(inches)
13
7
Tape width
(mm)
12
12
1
Quantity per reel
1,000
4,000
www.zetex.com
G
S
D
Related parts for ZXMN7A11GTA
ZXMN7A11GTA Summary of contents
... Power management functions • Disconnect switches • Motor control • Class D audio output stages Ordering information Device Reel size (inches) ZXMN7A11GTA 7 ZXMN7A11GTC 13 Device marking ZXMN 7A11 Issue 1 - March 2006 © Zetex Semiconductors plc 2006 Tape width Quantity per reel (mm) ...
Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C A Linear derating factor Power dissipation at T =25°C A ...
Characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2006 ZXMN7A11G 3 www.zetex.com ...
Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†)(‡) Switching Turn-on-delay ...
Typical characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2006 ZXMN7A11G 5 www.zetex.com ...
Typical characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2006 ZXMN7A11G 6 www.zetex.com ...
Issue 1 - March 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN7A11G www.zetex.com ...
Package outline - SOT223 DIM Millimeters Min Max A - 1.80 A1 0.02 0.10 b 0.66 0.84 b2 2.90 3.10 C 0.23 0.33 D 6.30 6.70 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas ...
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