FDD8451 Fairchild Semiconductor, FDD8451 Datasheet - Page 2
![MOSFET N-CH 40V 9A DPAK](/photos/5/38/53880/261-dpak_sml.jpg)
FDD8451
Manufacturer Part Number
FDD8451
Description
MOSFET N-CH 40V 9A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDD8451.pdf
(6 pages)
Specifications of FDD8451
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
990pF @ 20V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.024Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±20V
Drain Current (max)
28A
Power Dissipation
30W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
29 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
28 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8451TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD8451
Manufacturer:
FAIRCHILD
Quantity:
30 000
FDD8451 Rev. B2
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3: Starting T
BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
BV
GS(th)
SD
iss
oss
rss
g
g
g
gs
gd
rr
the drain pins. R
V
Symbol
DSS
T
T
GS(th)
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
J
= 25
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transcondductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge
°
JC
C, L = 0.1 mH, I
is guaranteed by design while R
AS
Parameter
= 20 A, V
DD
a)
= 36 V, V
T
40 °C/W when mounted on a
1 in
J
JA
= 25°C unless otherwise noted
2
is determined by the user’s board design.
pad of 2 oz copper
GS
= 10 V.
I
I
25°C
V
V
D
D
V
I
25°C
V
V
V
T
V
V
f = 1MHz
f = 1MHz
V
V
V
V
I
I
DS
GS
D
F
F
J
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 A, V
= 250 A, referenced to
= 9A, di/dt = 100A/ s
= 9A, di/dt = 100A/ s
= 250 A, referenced to
= 150°C
= 32V, V
= ±20V, V
= 20V, I
= 5V, I
= 20V, V
= 0V, I
= V
= 10V, I
= 4.5V, I
= 10V, I
= 20V, I
= 10V, R
= 10V
2
Test Conditions
DS
, I
D
S
D
D
D
D
GS
D
= 9A
GS
D
= 9A
GS
GEN
= 9A
DS
= 9A
= 9A
= A
= 250 A
= 7A
= 0V
= 0V
= 0V,
= 0V
= 6
b)
Min
40
1
96 °C/W when mounted on
a minimum pad
33.5
Typ
0.87
-5.7
780
112
8.6
2.5
3.7
2.1
1.1
19
16
19
23
32
29
72
25
19
7
3
2
www.fairchildsemi.com
±100
Max
990
150
110
1.2
14
10
34
10
20
24
30
41
11
38
29
1
3
mV/°C
Units
mV/°C
m
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nC
ns
V
V
V
S
A